There is a great current interest in micro-LED display which is expected as a high-efficiency, high-brightness, and high-resolution display for next-generation wearable and movable information devices. However, it is still very challenging to realize a full-color micro-LED display with performances exceeding those of the conventional LCD and OLED displays in terms of power consumption, brightness, resolution, etc. This is because that the present micro-LED technology which is essentially based on direct plasma etching of flat LED wafers has a number of fundamental limitations, such as, strong reduction in internal quantum efficiency with decreasing chip size due to plasma-induced nonradiative defects on the micro-LED sidewall surface, strong optical cross-talks between micro-LED pixels resulting from increased lateral emission through micro-LED sidewalls, lack of a high-efficiency GaN-based red LED, etc. We proposed a novel directional micro-LED by employing the evanescent wave coupling effect in a micron-sized truncated cone structure as a promising device to overcome the fundamental limitations of the conventional micro-LED technology. In this talk, I will first give a review on the basic characteristics of this novel micro-LED. Then, recent results towards experimental realization of this novel micro-LED will be presented